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| Composite Transistors XP03316 Silicon NPN epitaxial planar type (Tr1) Silicon PNP epitaxial planar type (Tr2) For switching/digital circuits Features * Two elements incorporated into one package (Transistors with built-in resistor) * Reduction of the mounting area and assembly cost by one half 1 2 3 (0.425) Unit: mm 0.12+0.05 -0.02 0.200.05 5 4 1.250.10 2.10.1 (0.65) (0.65) Basic Part Number * UNR2216 x UNR2116 10 1.30.1 2.00.1 0.90.1 Absolute Maximum Ratings Ta = 25C Parameter Tr1 Collector-base voltage (Emitter open) Collector-emitter voltage (Base open) Collector current Tr2 Collector-base voltage (Emitter open) Collector-emitter voltage (Base open) Collector current Overall Total power dissipation Junction temperature Storage temperature Symbol VCBO VCEO IC VCBO VCEO IC PT Tj Tstg Rating 50 50 100 -50 -50 -100 150 150 -55 to +150 Unit V V mA V V mA mW C C 1 Tr1 1: Emitter (Tr1) 2: Base (Tr1) 3: Emitter (Tr2) EIAJ: SC-88A 0 to 0.1 Marking Symbol: AM Internal Connection 5 4 0.9+0.2 -0.1 4: Collector (Tr2) 5: Collector (Tr1) Base (Tr2) SMini5-G1 Package 5 Tr2 2 3 0.20.1 Publication date: August 2003 SJJ00281AED 1 XP03316 Electrical Characteristics Ta = 25C 3C * Tr1 Parameter Collector-base voltage (Emitter open) Collector-emitter voltage (Base open) Collector-base cutoff current (Emitter open) Collector-emitter cutoff current (Base open) Emitter-base cutoff current (Collector open) Forward current transfer ratio Collector-emitter saturation voltage Output voltage high-level Output voltage low-level Input resistance Transition frequency Symbol VCBO VCEO ICBO ICEO IEBO hFE VCE(sat) VOH VOL R1 fT VCB = 10 V, IE = -2 mA, f = 200 MHz Conditions IC = 10 A, IE = 0 IC = 2 mA, IB = 0 VCB = 50 V, IE = 0 VCE = 50 V, IB = 0 VEB = 6 V, IC = 0 VCE = 10 V, IC = 5 mA IC = 10 mA, IB = 0.3 mA VCC = 5 V, VB = 0.5 V, RL = 1 k VCC = 5 V, VB = 2.5 V, RL = 1 k -30% 4.7 150 4.9 0.2 +30% 160 Min 50 50 0.1 0.5 0.01 460 0.25 Typ Max Unit V V A A mA V V V k MHz Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors. * Tr2 Parameter Collector-base voltage (Emitter open) Collector-emitter voltage (Base open) Collector-base cutoff current (Emitter open) Collector-emitter cutoff current (Base open) Emitter-base cutoff current (Collector open) Forward current transfer ratio Collector-emitter saturation voltage Output voltage high-level Output voltage low-level Input resistance Transition frequency Symbol VCBO VCEO ICBO ICEO IEBO hFE VCE(sat) VOH VOL R1 fT VCB = -10 V, IE = 1 mA, f = 200 MHz Conditions IC = -10 A, IE = 0 IC = -2 mA, IB = 0 VCB = -50 V, IE = 0 VCE = -50 V, IB = 0 VEB = -6 V, IC = 0 VCE = -10 V, IC = -5 mA IC = -10 mA, IB = - 0.3 mA VCC = -5 V, VB = - 0.5 V, RL = 1 k VCC = -5 V, VB = -2.5 V, RL = 1 k -30% 4.7 80 -4.9 - 0.2 +30% 160 Min -50 -50 - 0.1 - 0.5 - 0.01 460 - 0.25 Typ Max Unit V V A A mA V V V k MHz Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors. Common characteristics chart PT Ta 250 Total power dissipation PT (mW) 200 150 100 50 0 0 40 80 120 160 Ambient temperature Ta (C) 2 SJJ00281AED XP03316 Characteristics charts of Tr1 IC VCE Collector-emitter saturation voltage VCE(sat) (V) 140 IB = 1.0 mA 120 VCE(sat) IC 1 0.9 mA 0.8 mA 0.7 mA 0.6 mA 0.5 mA 0.4 mA hFE IC 350 300 250 200 150 100 50 0 Ta = 85C 25C -25C VCE = 10V IC / IB = 10 100 80 0.3 mA 60 0.2 mA 40 20 0.1 mA Ta = 25C 0 2 4 6 8 10 12 0.1 25C Ta = 85C -25C 0 0.01 0.1 Forward current transfer ratio hFE Collector current IC (mA) 1 10 100 1 10 100 1 000 Collector-emitter voltage VCE (V) Collector current IC (mA) Collector current IC (mA) Cob VCB Collector output capacitance C (pF) (Common base, input open circuited) ob 10 f = 1 MHz Ta = 25C 1 000 IO VIN VO = 5 V Ta = 25C 10 VO = 0.2 V Ta = 25C VIN IO Output current IO (mA) Input voltage VIN (V) 100 10 1 1 1 0 10 20 30 40 0.1 0 1 2 3 4 5 0.1 0.1 1 10 100 Collector-base voltage VCB (V) Input voltage VIN (V) Output current IO (mA) SJJ00281AED 3 XP03316 Characteristics charts of Tr2 IC VCE Collector-emitter saturation voltage VCE(sat) (V) -140 IB = -1.0 mA -120 - 0.9 mA - 0.8 mA - 0.7 mA - 0.6 mA - 0.5 mA - 0.4 mA -60 -40 -20 - 0.3 mA - 0.2 mA - 0.1 mA Ta = 25C 0 -2 -4 -6 -8 -10 -12 VCE(sat) IC -10 IC / IB = 10 300 hFE IC Ta = 85C VCE = -10V Forward current transfer ratio hFE 250 25C Collector current IC (mA) -100 -80 -1 200 -25C 150 25C - 0.1 Ta = 85C 100 -25C 50 0 - 0.01 - 0.1 -1 -10 -100 0 - 0.1 -1 -10 -100 -1 000 Collector-emitter voltage VCE (V) Collector current IC (mA) Collector current IC (mA) Cob VCB Collector output capacitance C (pF) (Common base, input open circuited) ob 10 IO VIN -100 f = 1 MHz Ta = 25C VIN IO -10 VO = - 0.2 V Ta = 25C VO = -5 V Ta = 25C Output current IO (mA) -10 Input voltage VIN (V) -1 -1 1 0 10 20 30 40 - 0.1 0 - 0.5 -1.0 -1.5 -2.0 - 0.1 - 0.1 -1 -10 -100 Collector-base voltage VCB (V) Input voltage VIN (V) Output current IO (mA) 4 SJJ00281AED Request for your special attention and precautions in using the technical information and semiconductors described in this material (1) An export permit needs to be obtained from the competent authorities of the Japanese Government if any of the products or technologies described in this material and controlled under the "Foreign Exchange and Foreign Trade Law" is to be exported or taken out of Japan. (2) The technical information described in this material is limited to showing representative characteristics and applied circuits examples of the products. It neither warrants non-infringement of intellectual property right or any other rights owned by our company or a third party, nor grants any license. (3) We are not liable for the infringement of rights owned by a third party arising out of the use of the product or technologies as described in this material. (4) The products described in this material are intended to be used for standard applications or general electronic equipment (such as office equipment, communications equipment, measuring instruments and household appliances). Consult our sales staff in advance for information on the following applications: * Special applications (such as for airplanes, aerospace, automobiles, traffic control equipment, combustion equipment, life support systems and safety devices) in which exceptional quality and reliability are required, or if the failure or malfunction of the products may directly jeopardize life or harm the human body. * Any applications other than the standard applications intended. (5) The products and product specifications described in this material are subject to change without notice for modification and/or improvement. At the final stage of your design, purchasing, or use of the products, therefore, ask for the most up-to-date Product Standards in advance to make sure that the latest specifications satisfy your requirements. (6) When designing your equipment, comply with the guaranteed values, in particular those of maximum rating, the range of operating power supply voltage, and heat radiation characteristics. Otherwise, we will not be liable for any defect which may arise later in your equipment. Even when the products are used within the guaranteed values, take into the consideration of incidence of break down and failure mode, possible to occur to semiconductor products. Measures on the systems such as redundant design, arresting the spread of fire or preventing glitch are recommended in order to prevent physical injury, fire, social damages, for example, by using the products. (7) When using products for which damp-proof packing is required, observe the conditions (including shelf life and amount of time let standing of unsealed items) agreed upon when specification sheets are individually exchanged. (8) This material may be not reprinted or reproduced whether wholly or partially, without the prior written permission of Matsushita Electric Industrial Co., Ltd. 2002 JUL |
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